High-brightness GaN laser diodes
Final Report Abstract
During the project, important epitaxy-related challenges towards the realization of nitride-based highbrightness lasers have been resolved. A general vertical waveguide structure resulting in tremendously reduced mode divergence of only 10 degrees has been demonstrated as epitaxially grown layer stack including electrical operation mode as LED. Very low resistivities for Ge-doped InAlN/GaN mutiple layer stacks and thick, highly reflecting DBR structures have been achieved. Homoepitaxially grown GaN:Ge/GaN:Mg tunnel junctions have reached a status in LED where virtually no bias offset is observed with respect to conventional ITO contacts. Such tunnel contacts open new possibilities towards fully symmetrical waveguide structures with large mode volume. Our recently developed rapid prototyping for laser diode fabrication enables our own attempts to realize the first GaN_based PBC laser in the near future. We are now planning to implement successively all developed technologies – highly conductive n-type InAlN/GaN waveguide structures and GaN:Ge/GaN:Mg tunnel junctions which will open up a complete novel perspective for nitrdie-based laser diodes with reduced far-field divergence and therefore high brilliance.
Publications
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„GaN:Mg/GaN:Ge tunnel junctions for better light emitters" Int. Conf. Nitride Semiconductors 2019, Bellevue, Washington, USA, 2019 (regular contribution)
C. Berger, S. Neugebauer, C. Seneza, J. Bläsing, A. Dadgar, A. Strittmatter
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„Lattice matched InAIN/GaN 1D photonic band gap crystal (PBC) structures for single mode high-power laser diodes”, Int. Conf. Nitride Semiconductors 2019, Bellevue, Washington, USA, 2019 (regular contribution)
P. Sana, C. Berger, M.P. Schmidt, G. Schmidt, A. Dadgar, J. Bläsing, H. Witte, J. Christen, A. Strittmatter
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Low-resistivity vertical current transport across AlInN/GaN interfaces. Japanese Journal of Applied Physics, 60(1), 010905.
Sana, Prabha; Seneza, Cleophace; Berger, Christoph; Witte, Hartmut; Schmidt, Marc-Peter; Bläsing, Jürgen; Neugebauer, Silvio; Hoerich, Florian; Dadgar, Armin & Strittmatter, André
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Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping. Japanese Journal of Applied Physics, 61(1), 015501.
Seneza, Cleophace; Berger, Christoph; Sana, Prabha; Witte, Harmut; Bläsing, Jürgen; Dempewolf, Anja; Dadgar, Armin; Christen, Jürgen & Strittmatter, André
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Novel concepts for III-N-based vertical cavity surface emitting lasers. 2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) (2021, 6, 21), 1-1. American Geophysical Union (AGU).
Dadgar, Armin
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"Analysis of vertical indium distribution in latticematched AlInN layers” Int. Conf. Metalorganic Vapor Phase Epitaxy (ICMOVPE XX) - Stuttgart, 11.-14.07.2022, Germany (regular contribution)
T. Xin, C. Berger, J. Bläsing, A. Dadgar, A. Strittmatter
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"Heavily Ge-doped GaN films - properties and applications” Int. Conf. Metalorganic Vapor Phase Epitaxy (ICMOVPE XX) - Stuttgart, 11.-14.07.2022, Germany (regular contribution)
C. Berger, S. Neugebauer, A. Dadgar, H.Schürmann, J. Bläsing, P. Veit, J. Christen, A. Strittmatter
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"MOVPE-grown optoelectronic devices based on GaN:Mg/GaN:Ge tunnel junctions” Int. Workshop on Nitride Semiconductors - Berlin, 2022, Germany (regular contribution)
C. Berger, A. Dadgar, J. Bläsing, G. Schmidt, H. Schürmann, P. Veit, J. Christen, A. Strittmatter
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Heavily Ge-doped GaN as transparent current spreading layer for blue tunnel junction light emitting diodes. Journal of Applied Physics, 132(23).
Berger, C.; Neugebauer, S.; Hörich, F.; Dadgar, A. & Strittmatter, A.
