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3D tailoring of all-oxide heterostructures by ion beams

Subject Area Experimental Condensed Matter Physics
Theoretical Condensed Matter Physics
Term from 2018 to 2023
Project identifier Deutsche Forschungsgemeinschaft (DFG) - Project number 405595647
 
Final Report Year 2024

Final Report Abstract

Inter-relations among charge, spin, orbital and lattice parameters are largely demonstrated in multi-functional oxide materials which exhibit a variety of exotic properties, ranging from superconductivity, insulator-metal transition, colossal magnetoresistance, charge ordering, and orbital ordering, etc. In particular, tilting a delicate energy balance in lattice interactions and kinetics, achieved by temperature, pressure or chemical control, may result in exotic phenomena in these systems. However, fine-tailoring such interactions remains a significant challenge. In this context, defect engineering via ion irradiation has emerged as a powerful method for fine-tuning complex, otherwise inaccessible phases of oxide thin films. By introducing strain and electronic disorder, this approach enables the controlled manipulation of these materials. This project brings together the expertise of three key research groups: the National Chiao Tung University group (Taiwan) for thin film epitaxy, the TU Chemnitz group for density functional theory calculations, and the HZDR group for ion irradiation and materials characterization. We applied helium ion beams to various transition metal oxide films and successfully achieved controllable tuning of their structural, electrical, and magnetic properties. This tuning was accomplished with both lateral and depth resolution, offering three-dimensional (3D) control. Key results include: (1) the creation of super-tetragonal BiFeO3 and the formation of in-plane charged antiphase boundaries and 180° domain walls in BiFeO3 films through helium implantation; (2) the induction of the topological Hall effect in thick SrRuO 3 layers via depth-gradient defect engineering; and (3) the lateral patterning of NiCo2O4 films with modulated magnetic and electrical properties. Additionally, we demonstrated the insulator-metal transition in La0.7Sr0.3MnO3-δ and SrVO3 thin films. It is worth noting that ion beam technology is already well-established for silicon-based chip technology, offering industry-grade repeatability and scalability. As such, we have provided the scientific community with a versatile method for tuning oxide films, applicable across various materials, and ready for industry-level applications.

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