The relation between spatial electron and spin propagation in n-type GaAs based semiconductor structures

• Applicant: Professor Dr. Wolfgang Ossau
• Subject Area: Experimental Condensed Matter Physics
• Term: from 2007 to 2015
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 40915805

The goal of the proposed research is to find a quantitative connection between carrier and spin propagation in 3D and 2D n-type GaAs based semiconductor structures. Using a combination of complementary cw-optical techniques that encompass variants of spatially resolved photoluminescence and spatially resolved Hanle-MOKE spectroscopy, we will establish a clear cut connection between carrier and spin mobilities. These parameters will then form the basis to identify the underlying microscopic mechanisms that dominate spin propagation in different physical regimes. These efforts will finally put us in a position in which we are able to predict and verify work parameters for architectures that are based on spin transport.

• DFG Programme: Priority Programmes
• Subproject of: SPP 1285: Semiconductor Spintronics
• Participating Person: Dr. Tobias Kießling