The relation between spatial electron and spin propagation in n-type GaAs based semiconductor structures

• Antragsteller: Professor Dr. Wolfgang Ossau
• Fachliche Zuordnung: Experimentelle Physik der kondensierten Materie
• Förderung: Förderung von 2007 bis 2015
• Projektkennung: Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 40915805

The goal of the proposed research is to find a quantitative connection between carrier and spin propagation in 3D and 2D n-type GaAs based semiconductor structures. Using a combination of complementary cw-optical techniques that encompass variants of spatially resolved photoluminescence and spatially resolved Hanle-MOKE spectroscopy, we will establish a clear cut connection between carrier and spin mobilities. These parameters will then form the basis to identify the underlying microscopic mechanisms that dominate spin propagation in different physical regimes. These efforts will finally put us in a position in which we are able to predict and verify work parameters for architectures that are based on spin transport.

• DFG-Verfahren: Schwerpunktprogramme
• Teilprojekt zu: SPP 1285: Halbleiter-Spintronik
• Beteiligte Person: Dr. Tobias Kießling