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Experimental verification of the Spin Gunn Effect

Fachliche Zuordnung Experimentelle Physik der kondensierten Materie
Förderung Förderung von 2007 bis 2011
Projektkennung Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 40997636
 
The formation and transit of charge domains through n-type semiconductors like GaAs or InP at high electric fields lead to the established Gunn effect. It is proposed that this phenomenon is spin dependent and leads to spin polarized domains moving through the material. This is termed the Spin Gunn Effect. This project proposes to verify experimentally the existence of the spin Gunn effect and to investigate its dynamics. A pulsed NMR scheme will be used to measure the Dynamic Nuclear Polarization induced by the passage of the spin polarized electron domains.
DFG-Verfahren Schwerpunktprogramme
 
 

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