Ultimatives Skalierungs- und Leistungspotential von MoS2 Feldeffekttransistoren ( ULTIMOS2)

• Antragsteller: Professor Dr.-Ing. Max Christian Lemme; Privatdozent Dr.-Ing. Frank Schwierz
• Fachliche Zuordnung: Elektronische Halbleiter, Bauelemente und Schaltungen, Integrierte Systeme, Sensorik, Theoretische Elektrotechnik
• Förderung: Förderung von 2019 bis 2024
• Projektkennung: Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 412113712

• Erstellungsjahr: 2024

Keine Zusammenfassung vorhanden

Projektbezogene Publikationen (Auswahl)

• Insulators for 2D nanoelectronics: the gap to bridge. Nature Communications, 11(1).
  Illarionov, Yury Yu.; Knobloch, Theresia; Jech, Markus; Lanza, Mario; Akinwande, Deji; Vexler, Mikhail I.; Mueller, Thomas; Lemme, Max C.; Fiori, Gianluca; Schwierz, Frank & Grasser, Tibor
  
• Electric bias-induced edge degradation of few-layer MoS2 devices. Materials Today: Proceedings, 53, 281-284.
  Thiele, Sebastian; Eliseyev, Ilya A.; Smirnov, Alexander N.; Jacobs, Heiko O.; Davydov, Valery Y.; Schwierz, Frank & Pezoldt, Jörg
  
• How to report and benchmark emerging field-effect transistors. Nature Electronics, 5(7), 416-423.
  Cheng, Zhihui; Pang, Chin-Sheng; Wang, Peiqi; Le, Son T.; Wu, Yanqing; Shahrjerdi, Davood; Radu, Iuliana; Lemme, Max C.; Peng, Lian-Mao; Duan, Xiangfeng; Chen, Zhihong; Appenzeller, Joerg; Koester, Steven J.; Pop, Eric; Franklin, Aaron D. & Richter, Curt A.
  
• Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning. Nature Electronics, 5(6), 356-366.
  Knobloch, Theresia; Uzlu, Burkay; Illarionov, Yury Yu.; Wang, Zhenxing; Otto, Martin; Filipovic, Lado; Waltl, Michael; Neumaier, Daniel; Lemme, Max C. & Grasser, Tibor
  
• Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation. Nature Electronics, 5(12), 849-858.
  Luo, Pengfei; Liu, Chang; Lin, Jun; Duan, Xinpei; Zhang, Wujun; Ma, Chao; Lv, Yawei; Zou, Xuming; Liu, Yuan; Schwierz, Frank; Qin, Wenjing; Liao, Lei; He, Jun & Liu, Xingqiang
  
• Six Decades of Research on 2D Materials: Progress, Dead Ends, and New Horizons. IEEE Journal of the Electron Devices Society, 10, 443-451.
  Schwierz, Frank & Ziegler, Martin
  
• Towards zero-power 6G communication switches using atomic sheets. Nature Electronics, 5(6), 331-332.
  F. Schwierz
  
• Zero‐Bias Power‐Detector Circuits based on MoS2 Field‐Effect Transistors on Wafer‐Scale Flexible Substrates. Advanced Materials, 34(48).
  Reato, Eros; Palacios, Paula; Uzlu, Burkay; Saeed, Mohamed; Grundmann, Annika; Wang, Zhenyu; Schneider, Daniel S.; Wang, Zhenxing; Heuken, Michael; Kalisch, Holger; Vescan, Andrei; Radenovic, Alexandra; Kis, Andras; Neumaier, Daniel; Negra, Renato & Lemme, Max C.
  
• CVD graphene contacts for lateral heterostructure MoS2 field effect transistors. npj 2D Materials and Applications, 8(1).
  Schneider, Daniel S.; Lucchesi, Leonardo; Reato, Eros; Wang, Zhenyu; Piacentini, Agata; Bolten, Jens; Marian, Damiano; Marin, Enrique G.; Radenovic, Aleksandra; Wang, Zhenxing; Fiori, Gianluca; Kis, Andras; Iannaccone, Giuseppe; Neumaier, Daniel & Lemme, Max C.