Project Details
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Vertical Transparent Conductive Oxide Transistors on Flexible Substrates

Subject Area Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
Term from 2019 to 2021
Project identifier Deutsche Forschungsgemeinschaft (DFG) - Project number 415044933
 
Final Report Year 2022

Final Report Abstract

It was the overall goal of the project to fabricate and investigate oxide-semiconductor-based vertical transistors on flexible substrates as a suitable technology for future high-frequency printed circuits. We have adapted the permeable base transistor (PBT) concept, which has led to excellent results for organic semiconductor materials. We were able to fabricate the most important component of the PBT, the Schottky diode, using oxide-based printed semiconductors. Unfortunately, the stability of these layers was so poor that we could not build functional PBTs. However, based on a newly established collaboration, this problem has been solved, and we will continue with the fabrication of full PBTs. Due to these unexpected problems , we decided to continue our work with organic permeable base transistors (OPBTs). Fortunately, due to recent process improvements, we were able to demonstrate a very high yield of device fabrication and excellent device quality, matching or even exceeding the expectations we had for the oxide devices. We established a collaboration supporting our work by developing a physics-based model for these devices. Based on this model, we developed a deep understanding of the underlying transport phenomena. In particular, we found out that neither the size nor the density of the nm-size pinholes in the base is essential for the device performance within the experimental range of parameters. Hence, the OPBTs turned out to be very robust against variations in the process conditions. Finally, using the know-how from the model development, we designed, fabricated, and measured complementary circuits (ring oscillators and inverters). These devices have an excellent yield, show high inverter gain (>30), and the signal delay per stage is as low as 11ns at a supply voltage of only 4V. Hence, with these developments, printed vertical transistors have made major steps ahead and are about to cross the GHz threshold.

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