Project Details
Projekt
Monolithically Integrated Bidirectional GaN-Based Switch enabling Self-Healing Multi-Winding DC/DC Converters
Subject Area
Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
Term
since 2021
Project identifier
Deutsche Forschungsgemeinschaft (DFG) - Project number 462668222
GaN-based transistors have opened a new era in power electronics and do not only enable energy conversion with higher efficiency, leading to larger achievable power densities, but could also play a crucial role as isolation/reconfiguration switches and variable passive components. Such components do not perform power conversion, but will allow for fault tolerance and self-healing in modular power conversion systems. The capabilities to replace a faulty cell or even to reconfigure it allowing fault-ride-through with consequent self-healing properties become particularly important as safety requirements and environmental concerns rise and regulations request repairable systems. In this project, GaN monolithically integrated bidirectional switches (MBS) will be developed for novel circuit architectures and topologies to exploit these innovative features. Multi-winding DC/DC converters allow connecting different energy systems and managing multiple DC-buses, thus presenting inherent fault-tolerance and self-healing capabilities. As cells are connected to the same core, a faulty cell can be isolated and the power re-routed among the healthy cells. Unfortunately, this theoretical fault-tolerance could be hardly exploited and the disadvantages of unbalanced operation hardly tackled due lacking suitable semiconductor devices. Within this project, a specially designed GaN-MBS should be employed to demonstrate fault isolation, converter cell reconfiguration and to realize variable passive components to adapt to changed converter configurations. With interdisciplinary research focusing device and topological aspects, a GaN-MBS will be developed by Compound Semiconductor Technology (CST) of RWTH Aachen University. This MBS will be implemented as isolation and reconfiguration switch as well as in variable resonant-tanks by the Chair of Power Electronics (CPE) of Kiel University (CAU). The former will be important for realizing fault-tolerance, the latter for handling unbalanced operation and achieving soft-switching in all states of such topology-variant power converters. In sum, high levels of power density, compactness, efficiency, and system reliability are expected to be demonstrated.CST will apply its long-standing experience in the growth of complex GaN-based heterostructures and process development to fabricate custom-designed MBS structures. After starting with planar geometry and monolithic integration, vertical integration paths will be explored promising efficient current and voltage scaling properties. To fully take advantage of the opportunities provided by GaN technology, CPE will combine its extensive experience in developing GaN power converters with its deep knowledge in the field of SiC-based multi-winding DC/DC converters. To achieve optimal results, CPE will follow a methodological approach including Root Cause Analysis (RCA), Fault Tree Analysis (FTA) as well as the Extended N-Extra Element Theorem (ENE²T).
DFG Programme
Priority Programmes
Subproject of
SPP 2312:
Energy Efficient Power Electronics "GaNius"
