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Proximity induced superconductivity in graphene on SiC by intercalation

Subject Area Experimental Condensed Matter Physics
Term since 2021
Project identifier Deutsche Forschungsgemeinschaft (DFG) - Project number 449119662
 
The development of epitaxial growth of graphene on SiC resulted in the availability of a high-quality waver scale material for fundamental research as well as for the development of applications. The intercalation of different species between the SiC substrate and epitaxial graphene has been shown to greatly expanded these opportunities. This is to a large part due to proximity coupling of graphene’s charge carriers with the intercalated atoms. In this project we will investigate the proximity coupling to correlated states (superconducting states, Mott states) caused by different intercalated species in monolayer and bilayer graphene. The growth of samples and their intercalation will be optimized using low-energy electron microscopy (LEEM) and related techniques whereas the electronic band structure of the intercalated systems is studied by angle-resolved photoelectron spectroscopy (ARPES).
DFG Programme Research Units
Major Instrumentation Upgrade LEEM Sample Stage
Instrumentation Group 5140 Hilfsgeräte und Zubehör für Elektronenmikroskope
 
 

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