Untersuchung von Verspannungsphänomenen in GaN-Schichten unter Einsatz hochauflösender Röntgendiffraktometrie bei variabler Meßtemperatur

• Applicant: Professor Dr. Detlef Hommel
• Subject Area: Experimental Condensed Matter Physics
• Term: from 2004 to 2009
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 5307350

• Final Report Year: 2008

Final Report Abstract

No abstract available

Publications

• Temperature dependence of the thermal expansion of GaN. Phys. Rev. B 72 (2005) 085218
  C. Roder, S. Einfeldt, S. Figge, and D. Hommel
  
• Spectrally resolved distribution of dislocations and crystallographic tilts in GaN layers grown on Si(111) substrates by maskless cantilever epitaxy. J. Appl. Phys. 100 (2006) 053103
  R.I. Barabash, C. Roder, G.E. Ice, J.D. Budai, O.M. Barabash, S. Einfeldt, S. Figge, and D. Hommel
  
• Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates. J. Appl. Phys. 100 (2006) 103511
  C. Roder, S. Einfeldt, S. Figge, T. Paskova, D. Hommel, P.P. Paskov, B. Monemar, U. Behn, B.A. Haskell, P.T. Fini, and S. Nakamura