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Strukturierung von H-passiviertem Si(100) mittels laserinduzierter Desorption zur Adsorption von organischen Molekülen in geordneten Mustern

Fachliche Zuordnung Physikalische Chemie von Festkörpern und Oberflächen, Materialcharakterisierung
Förderung Förderung von 2001 bis 2005
Projektkennung Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 5311676
 
Photo-induced reactions on H-terminated Si surfaces will be studied. VUV-Photoexcitation is provided by an F2-excimer laser. It will be explored whether VUV-photodesorption can be used for patterning of H-passivated Si surfaces. Adsorption of organic molecules on patterned and unpatterned surfaces will be studied with the goal to achieve selective adsorption such that patterned organic molecule arrays result. The structure in the substrate and/or of the adsorbed organic film will be probed on the 100 nm scale using Atomic Force Microscopy (AFM). High Resolution Electron Energy Loss Spectroscopy (HREELS) will shed light on the adsorption properties. The transition from VUVphotoinduced H-desorption under UHV conditions to laser direct writing in air will be studied. The later is a highly nonlinear process which may have a thermal as well as electronic mechanism. These experiments will also help to clarify the mechanism operative in local oxidation and patterning using an AFM in air.
DFG-Verfahren Sachbeihilfen
Beteiligte Person Professor Dr. Nils Hartmann
 
 

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