Preparation of two and three dimensional photonic crystals in Si and III-V semiconductors by pore etching

• Applicant: Professor Dr. Helmut Föll
• Subject Area: Experimental Condensed Matter Physics
• Term: from 2001 to 2006
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 5316426

The goal of the project is to improve the preparation of photonic crystals in Si by exploring the many new modes of pore etching discovered during the last few years, to try several possible modes of pore etching for the preparation of threedimensional photonic crystals in Si, and to try for the first time to produce two and three dimensional photonic crystals with III-V compounds. The work proposed is based on several unique features of pore etching in Si and particularly in GaAs, GaP and InP found in the previous research of the Kiel group.

• DFG Programme: Priority Programmes
• Subproject of: SPP 1113: Photonic Crystals