Preparation of two and three dimensional photonic crystals in Si and III-V semiconductors by pore etching

• Antragsteller: Professor Dr. Helmut Föll
• Fachliche Zuordnung: Experimentelle Physik der kondensierten Materie
• Förderung: Förderung von 2001 bis 2006
• Projektkennung: Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 5316426

The goal of the project is to improve the preparation of photonic crystals in Si by exploring the many new modes of pore etching discovered during the last few years, to try several possible modes of pore etching for the preparation of threedimensional photonic crystals in Si, and to try for the first time to produce two and three dimensional photonic crystals with III-V compounds. The work proposed is based on several unique features of pore etching in Si and particularly in GaAs, GaP and InP found in the previous research of the Kiel group.

• DFG-Verfahren: Schwerpunktprogramme
• Teilprojekt zu: SPP 1113: Photonische Kristalle