ICP RIE Etching

• Subject Area: Electrical Engineering and Information Technology
• Term: Funded in 2024
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 536792788

Chip processing of Si and GaN-based devices is one of the key unique competences of the Institute of Semiconductor Technology (IHT). This technology is of great importance for the fabrication of micro-opto-electro-mechanical systems and the research of novel sensor and actuator elements. For these objectives, the precise, reproducible processing of dielectrics, e.g. for lateral structuring of wafers or processing as integrated dielectrics for photonic modules, is of fundamental importance. Often the combination of high aspect ratio, high sidewall quality and precise nanostructure generation determines the requirement profile. Also for photonic systems, high aspect ratios as well as outstanding surface quality and structural fidelity are prerequisites for the fabrication of functional elements, which can only be achieved by ICP-RIE processes (inductively coupled plasma reactive ion etching).

• DFG Programme: Major Research Instrumentation
• Major Instrumentation: ICP RIE Ätzanlage
• Instrumentation Group: 0910 Geräte für Ionenimplantation und Halbleiterdotierung
• Applicant Institution: Technische Universität Braunschweig
• Leader: Professor Dr. Andreas Waag