Detailseite
Projekt Druckansicht

High-Field EPR with optical detection in semiconductors

Fachliche Zuordnung Experimentelle Physik der kondensierten Materie
Förderung Förderung von 2002 bis 2006
Projektkennung Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 5382689
 
High-field EPR and ENDOR with optical detection (high field ODMR) can have several advantages over conventional high-field EPR using microwave bridges: Higher sensitivity allowing the investigation of low defect concentrations in very small volumes and direct correlation of optical and microscopical properties. We want to improve our 72/95 GHz ODMR set up for PL-(photoluminescence) detected EPR/ENDOR with respect to better cavities with optical access for PL-ENDOR. Furthermore we want to investigate the structure of P-related dopants implanted into thin epitaxial layers of 4H- and 6H-SiC with respect to their lattice sites, electronic and microscopic structures as well as the accompanying implantation defects and their annealing properties.
DFG-Verfahren Schwerpunktprogramme
 
 

Zusatzinformationen

Textvergrößerung und Kontrastanpassung