Vertikale, verspannte eindimensionale Silizium Nanostrukturen und Bauelemente

• Antragstellerin: Professorin Dr.-Ing. Silke Christiansen
• Fachliche Zuordnung: Experimentelle Physik der kondensierten Materie
• Förderung: Förderung von 2005 bis 2009
• Projektkennung: Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 5439632

The chemical synthesis of 1D silicon nanostructures has provided a new route to manufacture vertical semiconducting nanostructures with precision on the atomic scale. A major problem inhibiting the utilization of these structures and limiting the investigation of their fundamental electronic and mechanical properties is finding a way to incorporate them into circuits. Elucidating 'Vertical strained 1D silicon Nanostructures and Devices' is a complex task, which requires an interdisciplinary consortium capable of addressing all relevant issues from metal nanoparticle template formation to controlled growth of 1D silicon nanostructures and their analysis in terms of mechanical and electrical properties as well as device integration issues. In this proposal we suggest therefore a transnational cooperation between the Max-Planck-Institute of Microstructure Physics (MPI), Halle (D), the Institute of Solid State Physics (IFK), Jena (D), the Institute for Solid State Electronics (FKE), Technical University of Vienna (A), the Materials Measurement Research Group at the 'Eidgenössische Materialprüfanstalt' (EMPA), Thun (CH) and the Nanostructure Research Group at the Ecole Polytechnique Federale de Lausanne (EPFL) in Lausanne (CH). While the EPFL and the FKE are responsible for providing ordered nanotemplates, the task of IFK, MPI and EPFL is to cover different aspects of controlled growth of 1D nanostructures on these templates. The EMPA is responsible for the electrical and mechanical characterization of individual 1D nanostructures. MPI and EMPA will carry out structural investigations down to the atomic scale. Using advanced wafer bonding at MPI the integration of nanowires in nano-electronic devices will be attempted while the actual devices will be manufactured at FKE

• DFG-Verfahren: Sachbeihilfen