2D Field-Effect Transistors (A06)

• Subject Area: Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
• Term: since 2025
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 528378584

2D materials promise further device scaling and improvement of device performance and are already considered for future electronics. The group at AMO in Aachen is a leader in the research on practical devices based on 2D materials. While the group in TU Dresden has exceptional expertise in the syn-thesis of 2D materials. Since here the channel material is decoupled from the wafer, integration into the BEOL is a natural choice although some significant issues remain to be solved. Within the TRR this project will supply the lateral devices with different performance levels.

• DFG Programme: CRC/Transregios
• Subproject of: TRR 404: Next Generation Electronics with Active Devices in Three Dimensions (Active-3D)
• Applicant Institution: Technische Universität Dresden
• Co-Applicant Institution: Rheinisch-Westfälische Technische Hochschule Aachen
• Project Heads: Professor Dr. Xinliang Feng; Professor Dr.-Ing. Max Christian Lemme