1T1R – 2D-FET and VCM-Device BEOL Integration (B02)

• Subject Area: Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
• Term: since 2025
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 528378584

One of the key features that make the approach of the active-3D very rewarding is the fact that switching devices and memory devices can be placed in close vicinity. The role of this project is to evaluate the potential of full-BEOL 1T1R elements realized by co-integration of a 2D-FET and an abrupt switching valence change memory (VCM) device. In that sense B02 already demonstrates the combination of two new elements as a starting point for further phases. This basic element allows to realize energy-efficient matrix-vector-multiplication on crossbar-arrays of 1T1R elements exploiting Kirchhoff’s laws.

• DFG Programme: CRC/Transregios
• Subproject of: TRR 404: Next Generation Electronics with Active Devices in Three Dimensions (Active-3D)
• Applicant Institution: Technische Universität Dresden
• Co-Applicant Institution: Rheinisch-Westfälische Technische Hochschule Aachen
• Project Heads: Dr.-Ing. Susanne Hoffmann-Eifert; Dr. Zhenxing Wang