Detailseite
Projekt
Polarization reduced GaN layers for light emitters on planar silicon substrates
Antragsteller
Professor Dr. Armin Dadgar
Fachliche Zuordnung
Experimentelle Physik der kondensierten Materie
Förderung
Förderung von 2008 bis 2017
Projektkennung
Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 48042628
The efficiency of group-III-nitride light emitters is currently limited by the piezo- and pyroelectric fields of conventional c-axis oriented GaN-based devices. To increase the efficiency, especially to realize efficient light emitters in the green spectral region, strong efforts are done worldwide to grow on non-polar material.We are focusing on the growth of polarization reduced GaN on high index Si-substrates to investigate and establish a technology likely suitable for low-cost, high-efficiency green light emitters on large diameter Si substrates. Silicon substrates are of huge interest for a reduction in LED and also HV-FET manufacturing cost. While c-axis oriented GaN on silicon is now considered as realistic choice for GaN based LEDs, it is also a very attractive substrate for polarization reduced growth if a simple route for its realization can be achieved. With the proposed approach we expect to reduce polarization fields of MQWs in growth direction at least by 50% with material low in stacking faults. The focus of the proposal will be the optimization in material quality and the investigation of different substrate orientations to achieve this, as well as a comparison between experiment and theoretical prediction for differently tilted GaN based MQWs.An intense exchange with the partners from the Research Group will promote a thorough understanding of growth mechanisms, not only for polarization reduced GaN but also for the generation of stacking faults and growth of ternary nitrides on polarization reduced layers, and by this a fast development of polarization reduced layers on silicon.
DFG-Verfahren
Forschungsgruppen
Beteiligte Person
Professor Dr. Alois Krost (†)
