Towards infrared diamond optoelectronics: time-resolved spectroscopy of excited acceptors in diamond
Final Report Abstract
The project was focused on the experimental investigation of the infrared characteristics of semiconducting diamond doped by boron acceptors. Intracenter transitions of boron in diamond in 2-4 µm wavelength range provide information on the detailed energy spectrum of hydrogen-like acceptors, the sensitivity when used as infrared detector, the speed of the infrared electronic response and potential light emission in a view of possible optioelectronic applications. In this project, these properties were accessed by high-resoluton infrared absorption spectroscopy, magneto-optical spectroscopy, time-resolved spectraoscopy, and photoluminescence studies. Special boron-doped diamond samples covering a wide range of parameters were prepared by the socalled high pressure hight temperature method. The key tasks of the project are to determine the oscillator strengths of acceptor intracenter transitions, to determine the lifetimes of excited boron states and their interaction with the lattice phonons, to investigate nonequilibrium electronic populations formed under infrared excitation as well as manufacturing photoconductive infrared detectors from the boron doped diamond. These studies were carried out successfully. Particularly important for the success of the project was the cooperation with the Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, Russia. This institute strongly supported the project by providing research grade, top level samples. The institute also participated in joint experimental studies, in the complex analysis of the results, as well as by fruitful scientific discussions and relevant theoretical calculations. The main results achieved in the frame of the project are: 1. Determination of the detailed energy spectrum of the boron acceptor in diamond, in particular the observation of resonant states of the boron acceptor within the spin-orbit split valence subband. From the analysis of the energy spectrum the binding energy of boron in diamond was determined. Using isotopically enriched boron doped diamonds enabled the determination of isotope-bound states in the boron spectrum and the accurate determination of the oscillator strengths of the boron transitions. Evidence of a large (larger than for any other similar semiconductor) isotopic impurity shift of 10B relative to 11B was found. 2. The investigations of the dynamics induced by infrared ultrafast resonant excitation of boron centers in diamond revealed lifetimes of most of the excited boron states of a few ps. Such short lifetimes triggered the theoretical study which predicted enhanced relaxation rates of nonequilibrium electrons due to a surprisingly efficient two-phonon assisted relaxation process. A fast response time (a few ps) to short infrared pulse has been realized by a boron doped diamond detector operated in a photoconductive mode. 3. Evidence was found for high-order nonlinear Zeeman effect occuring for intracenter boron transitions in diamond. The corresponding spectra deliver the splitting strength of particular boron transitions and their relative intensities, which can be used for analysis of the symmetry of excited boron states.
Publications
- Relaxation of infrared excitations in a HPHT IIb diamond, 29th Int. Conf. on Diamond and Carbon Materials, 2-6 September 2018, Dubrovnik, Croatia (2018)
S. G. Pavlov, S. A. Tarelkin, V. S. Bormashov, N. Stavrias, A. F. G. van deer Meer, M. S. Kuznetsov, S. A. Terentiev, N. A. Bekin, R. Kh. Zhukavin, V. N. Shastin, V. D. Blank, H.-W. Hübers
- Dynamics of infrared excitations in boron doped diamond, Diamond and Related Materials 92, 259-265 (2019)
S. G. Pavlov, S. A. Tarelkin, V.S. Bormashov, N. Stavrias, K. Saeedi, A. F. G. van der Meer, N. A. Bekin, R. Kh. Zhukavin, V. N. Shastin, M. S. Kuznetsov, S. A. Terentiev, S. A. Nosukhin, D. D. Prikhodko, V. D. Blank, M. Wienold, H.-W. Hübers
(See online at https://doi.org/10.1016/j.diamond.2019.01.013) - High-resolution absorption spectroscopy of boron acceptor centers in IIb-type HPHT diamond: boron isotopic effect, XXIII Int. Symposium “Nanophysics and Naonoelectronics”, 11.-14. March 2019, Nizhny Novgorod, Russia (2019)
D. D. Prikhodko, S. G. Pavlov, V. S. Bormashov, S. A. Tarelkin, M. S. Kuznetsov, S. A. Nosukhin, S. A. Terentiev, A. S. Galkin, H.-W. Hübers and V. D. Blank
- HPHT IIb diamond as an infrared detector, 30th Int. Conf. on Diamond and Carbon Materials, 8-12 September 2019, Seville, Spain (2019)
S. G. Pavlov, M. Wienold, D. D. Prikhodko, S. A. Tarelkin, M. S. Kuznetsov, S. A. Terentiev, S. A. Nosukhin, V. D. Blank and H.-W. Hübers
- Large substitutional impurity isotope shift in infrared spectra of boron-doped diamond, Phys. Rev. B 102, 155204 (2020)
D. D. Prikhodko, S. G. Pavlov, S. A. Tarelkin, V. S. Bormashov, M. S. Kuznetsov, S. A. Terentiev, S. A. Nosukhin, S. Yu. Troschiev, H.-W. Hübers, V. D. Blank
(See online at https://doi.org/10.1103/PhysRevB.102.155204)
