Aufeinander abgestimmte intramolekular adduktstabilisierte Alkoxid- und Amid-Prekursoren für MOCVD von oxidischen ferroelektrischen Schichtstrukturen

• Antragstellerin: Professorin Dr. Anjana Devi
• Fachliche Zuordnung: Chemische und Thermische Verfahrenstechnik
• Förderung: Förderung von 2001 bis 2008
• Projektkennung: Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 5313770

• Erstellungsjahr: 2008

Zusammenfassung der Projektergebnisse

During the course of this joint project, novel alkoxide and amide modified precursors for Hf, Zr, Ta, Mb were developed, tested and evaluated. In addition the influence of solvent for the performance of these precursors for LI-MOCVD has been investigated. The modified amides show some improvement in the overall performance compared to the modified alkoxide based precursors, especially in terms of handling. Hf and Zr amide-guanidinate precursors show some special improvements indicating a very clean decomposition. High quality HfO2, ZrO2, Ta2O5, Nb2O5 films with excellent electrical properties in terms of dielectric constant and leakage could be obtained with different mixed amide and alkoxide precursors. As the amide-guanidinate class of precursors seem very promising, a possible application of these classes of compounds for ALD (atomic layer deposition) of gate oxide and higher-k thin films should be considered, while the rare-earth complexes are now ready for exploration in MOCVD.

Projektbezogene Publikationen (Auswahl)

• "Precursor engineering and evaluation: Studies on the nature of molecular mechanisms involved in the MOCVD of TiO2 thin films". J. Mater. Chem., 14 (2004) 3231
  R. Bhakta, R. Thomas, F. Hipler, H. Bettinger, J. Müller, P. Ehrhart, A. Devi
  
• "Gas phase decomposition studies on the MOCVD precursor [Ti(OC3H7)4] using matrix-isolation FTIR spectroscopy". Proc. Electrochem. Soc. (2005) 312
  R. Bhakta, E. Gemel, J. Müller, A. Devi
  
• "High-k dielectric materials by metalorganic chemical vapor deposition: Growth and characterization". Ferroelectrics, 327 (2005) 111
  R. Thomas, S. Regnery, P. Ehrhart, R. Waser, R. Bhakta, U. Patil, A. Devi
  
• "Synthesis and structure of Bis(2-butyl-N,N'-diisopropylamidinateo)dichloro-hafnium(IV)". Acta Cryst. C 61 (2005) m370
  A. Milanov, R. Bhakta, M. Winter, K. Merz, A. Devi
  
• "Volatile single source precursors for the MOCVD of metal silicate thin films". Proc. Electrochem. Soc. (2005)913
  U. Patil, H.-W. Becker, M. Winter, R. A. Fischer, A. Devi
  
• "Zirconium dioxide thin films for high-k applications by MOCVD from novel mononuclear precursors". Proc. Electrochem. Soc. (2005) 944
  R. Thomas, U. Patil, P. Ehrhart, A. Devi, R. Waser
  
• "Guanidinate stabilized monomeric hafnium amide complexes as promising precursors for MOCVD of HfO2". Inorganic Chemistry, 46 (2006), 11008
  A. Milanov, R. Bhakta, A. Baunemann, H. W. Becker, R. Thomas, P. Ehrhart, M. Winter, A. Devi
  
• "Mixed amide malonate compound of hafnium as a novel monomeric precursor for MOCVD of HfO2 thin films". J. Mater. Chem. 16 (2006) 437
  A. Milanov, R. Bhakta, R. Thomas, P. Ehrhart, M. Winter, R. Waser, A. Devi
  
• "MOCVD of ZrO2 and HfO2 thin films from modified monomeric precursors". Chem. Vap. Deposition, 12 (2006) 172
  U. Patil, R. Thomas, A. Milanov, R. Bhakta, P. Ehrhart, R. Waser, R. Becker, H.-W. Becker, M. Winter, K. Merz, R. A. Fischer and A. Devi
  
• Liquid injection MOCVD of ZrO2 thin films using zirconium bis-(diethylamido)bis(di-tert-butylmalonato) as a novel precursor. Chem. Vap. Deposition 12(2006)295
  R. Thomas, A. Milanov, R. Bhakta, U. Patil, M. Winter, P. Ehrhart, R. Waser and A. Devi
  
• Precursor chemistry for TiO2: Titanium complexes with mixed nitrogen/oxygen ligand sphere. Dalton Trans., 28 (2006), 3485
  A. Baunemann, M. Hellwig, A. Varade, R. Bhakta, M. Winter, S. A. Shivashankar, R. A. Fischer, and A. Devi
  
• Thin films of HfO2 for high-k gate oxide applications from engineered alkoxide and amide based MOCVD precursors. J. Electrochem. Soc. 2006, 154, 3
  R. Thomas, E. Rije, P, Ehrhart, A. Milanov, R. Bhakta, A. Bauneman, A. Devi, R. A. Fischer and R. Waser
  
• "Investigations into the decomposition mechanism of [Ti(OPr')2(thd)2] using matrix isolation techniques". Electrochem. Soc. Trans. (2007), 2, 89
  R. Bhakta, H. Bettinger, and A. Devi
  
• "LI-MOCVD of HfO2 thin films using engineered amide based Hf precursors". Surface Coatings and Technology, (2007), 201(22-23), 9135
  A. Milanov, R. Thomas, M. Hellwig, K. Merz, H.-W. Becker, P. Ehrhart, R. A. Fischer, R. Waser, and A. Devi
  
• "Liquid injection MOCVD of TiO2 and SrTiO3 thin films from [Ti(OPr')2(tbaoac)2]: Film properties and compatibility with [Sr(thd)2]". Surface Coatings and Technology, (2007), 201(22-23), 9109
  R. Thomas, R. Bhakta, P. Ehrhart, R. A. Fischer, R. Waser and A. Devi
  
• "Stabilization of amide based complexes of Niobium and Tantalum using malonates as chelating ligands: Precursor chemistry and thin film deposition". Chemistry of Materials, (2007), 19, 6077
  M. Hellwig, A. Milanov, D. Barecca, J.-L. Deborde, R. Thomas, M. Winter, U. Kunze, R. A. Fischer and A. Devi
  
• "Synthesis and characterisation of zirconiumamido guanidinato complex: A potential precursor for ZrO2 thin films". Dalton Trans. (2007), 17, 1671
  A. Devi, R. Bhakta, A. Milanov, M. Hellwig, D. Barreca, E. Tondello, R. Thomas, P. Ehrhart, M. Winter, and R. A. Fischer
  
• "Thin films of ZrO2 for high-k applications employing engineered alkoxide and amide based MOCVD precursors". Chem. Vap. Deposition, (2007), 13, 98
  R. Thomas, R. Bhakta, A. Milanov, A. Devi and P. Ehrhart