Solution phase epitaxial (SPE) growth of semiconductors: from single crystal films to epitaxial semiconductor heterojunctions (F03)

• Subject Area: Solid State and Surface Chemistry, Material Synthesis ; Coating and Surface Technology ; Synthesis and Properties of Functional Materials
• Term: since 2025
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 538767711

Project F3 invents methods for the scalable printing of high-quality semiconductors by liquid-phase epitaxy. At the fundamental level, the project will determine how the particles within inks are generated and assembled upon evaporation of the solvent. Their interactions with each other laterally (with C6, S3, S5) and with the substrate underlying (with C1, C2, C3, C4, F6) will be controlled to determine epitaxial growth ― with modeling input from M1, M3, M4, M5. In terms of applications, the success of the deposition methods will be assessed by quantitative functional performance parameters with S4, F1.

• DFG Programme: Collaborative Research Centres
• Subproject of: SFB 1719: Next-generation printed semiconductors: Atomic-level engineering via molecular surface chemistry
• Applicant Institution: Friedrich-Alexander-Universität Erlangen-Nürnberg
• Project Head: Professor Dr. Christoph J. Brabec, since 7/2025