Controlling deposit site and morphology via covalent and non-covalent interactions (C01)

• Subject Area: Solid State and Surface Chemistry, Material Synthesis ; Physical Chemistry of Solids and Surfaces, Material Characterisation
• Term: since 2025
• Project identifier: Deutsche Forschungsgemeinschaft (DFG) - Project number 538767711

Project C1 aims at controlling the morphology of the semiconductor deposit using the interactions that appear during sALD growth between the substrate, the solid deposit, and the liquid. Using information from M1, M3, M4, M5 and self-assembled monolayers from F6 to set the density of nucleation sites and interfacial energies, ligands and solvents will be adjusted to direct the growth mode from homogeneously vertical (film) to three-dimensional (hemispherical) or two-dimensional (planar flakes). Individual steps will be identified with C5, C6, F5, the structure and properties of the deposits determined with S1-S5.

• DFG Programme: Collaborative Research Centres
• Subproject of: SFB 1719: Next-generation printed semiconductors: Atomic-level engineering via molecular surface chemistry
• Applicant Institution: Friedrich-Alexander-Universität Erlangen-Nürnberg
• Project Head: Professor Dr. Julien Bachmann, Ph.D.